•  Retrait gratuit dans votre magasin Club
  •  7.000.000 titres dans notre catalogue
  •  Payer en toute sécurité
  •  Toujours un magasin près de chez vous     
  •  Retrait gratuit dans votre magasin Club
  •  7.000.000 titres dans notre catalogue
  •  Payer en toute sécurité
  •  Toujours un magasin près de chez vous

Einstein's Photoemission

Emission from Heavily-Doped Quantized Structures

Kamakhya Prasad Ghatak
Livre relié | Anglais | Springer Tracts in Modern Physics | n° 262
105,45 €
+ 210 points
Format
Livraison sous 1 à 4 semaines
Passer une commande en un clic
Payer en toute sécurité
Livraison en Belgique: 3,99 €
Livraison en magasin gratuite

Description

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Spécifications

Parties prenantes

Auteur(s) :
Editeur:

Contenu

Nombre de pages :
495
Langue:
Anglais
Collection :
Tome:
n° 262

Caractéristiques

EAN:
9783319111872
Date de parution :
04-12-14
Format:
Livre relié
Format numérique:
Genaaid
Dimensions :
156 mm x 234 mm
Poids :
920 g

Les avis