Description

Nowadays,active-matrix addressing using a-Si TFTs is
dominating in the flat panel display markets.
However, low temperature polysilicon has been
proposed and considered to be a promising alternative
technology. Metal induced crystallization (MIC) is
one of the methods to obtain high quality polysilicon
films at low temperatures.

A few technologies are presented in this monograph,
which improve the quality of MIC polysilicon film and
hence the performance of TFTs built on.

Amelioration of MIC processes has been made to
produce high performance polysilicon TFTs using
solution based MIC (SMIC) and defined-grain MIC
(DG-MIC) methods.

Novel post-annealing technologies are also introduced
to reduce the micro-defects in MIC polysilicon film
and hence to achieve better performance. These
technologies include YAG laser post-annealing and
flash lamp post-annealing. Particularly, it is the
first time to report the application of flash lamp
annealing technology in the fabrication of low
temperature polysilicon and TFTs.