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- Retrait gratuit dans votre magasin Club
- 7.000.000 titres dans notre catalogue
- Payer en toute sécurité
- Toujours un magasin près de chez vous
Sic Power Module Design
Performance, Robustness and Reliability
259,45 €
+ 518 points
Description
High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.
This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.
Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.
Spécifications
Parties prenantes
- Editeur:
Contenu
- Nombre de pages :
- 360
- Langue:
- Anglais
- Collection :
Caractéristiques
- EAN:
- 9781785619076
- Date de parution :
- 03-02-22
- Format:
- Livre relié
- Format numérique:
- Genaaid
- Dimensions :
- 160 mm x 239 mm
- Poids :
- 725 g
