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Format
Description
Gettering Defects in Semiconductors fulfills three basic purposes:
- to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
- to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Spécifications
Parties prenantes
- Auteur(s) :
- Editeur:
Contenu
- Nombre de pages :
- 388
- Langue:
- Anglais
- Collection :
- Tome:
- n° 19
Caractéristiques
- EAN:
- 9783540262442
- Date de parution :
- 15-09-05
- Format:
- Livre relié
- Format numérique:
- Genaaid
- Dimensions :
- 156 mm x 234 mm
- Poids :
- 739 g
