- Retrait gratuit dans votre magasin Club
- 7.000.000 titres dans notre catalogue
- Payer en toute sécurité
- Toujours un magasin près de chez vous
- Retrait gratuit dans votre magasin Club
- 7.000.000 titres dans notre catalogue
- Payer en toute sécurité
- Toujours un magasin près de chez vous
Advanced Gate Stacks for High-Mobility Semiconductors
158,45 €
+ 316 points
Description
Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High-? Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High-? Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs.- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case.- High ? Gate Dielectrics for Compound Semiconductors.- Interface Properties of High-? Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.
Spécifications
Parties prenantes
- Editeur:
Contenu
- Nombre de pages :
- 384
- Langue:
- Anglais
- Collection :
- Tome:
- n° 27
Caractéristiques
- EAN:
- 9783642090714
- Date de parution :
- 30-11-10
- Format:
- Livre broché
- Format numérique:
- Trade paperback (VS)
- Dimensions :
- 156 mm x 234 mm
- Poids :
- 566 g
